HARPIA-TG is a transient grating spectrometer designed for measuring carrier diffusion and lifetime. Measurements are based on the laser-induced transient grating (LITG) technique, enabling the simultaneous observation of non-equilibrium carrier recombination and diffusion by all‑optical means.

HARPIA-TG allows the characterization of electrically non‑conductive or non-fluorescent samples. It is suitable for a wide range of materials, including semiconductor materials and derivatives such as silicon carbide (SiC), gallium nitride (GaN), perovskites, organic and inorganic solar cells, quantum dots, and even complex nanostructures like quantum wells.

Coupled with a CARBIDE or PHAROS femtosecond laser featuring an integrated optical parametric amplifier (I-OPA), the compact system is fully automated and computer-controlled via advanced measurement and analysis software. Thus, the user only needs to put the sample in the holder and start the measurement to obtain the diffusion coefficient within minutes.

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